Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

The interaction between intersubband resonances (ISRs) and metamaterial microcavities constitutes a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically...

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

Light–matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphen...

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...

MOCVD growth of GaN-based high electron mobility transistor structures